专利名称：MEMS DEVICE WITH DIFFERENTIAL
VERTICAL SENSE ELECTRODES
发明人：Aaron A. Geisberger,Margaret L. Kniffin申请号：US14958966申请日：20151204
公开号：US20160083249A1公开日：20160324
专利附图：
摘要：A MEMS device includes a first sense electrode and a first portion of a sensemass formed in a first structural layer, where the first sense electrode is fixedly coupledwith the substrate and the first portion of the sense mass is suspended over the
substrate. The MEMS device further includes a second sense electrode and a secondportion of the sense mass formed in a second structural layer. The second senseelectrode is spaced apart from the first portion of the sense mass in a direction
perpendicular to a surface of the substrate, and the second portion of the sense mass isspaced apart from the first sense electrode in the same direction. A junction is formedbetween the first and second portions of the sense mass so that they are coupledtogether and move concurrently in response to an imposed force.
申请人：FREESCALE SEMICONDUCTOR, INC.
地址：Austin TX US
国籍：US
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