Optically measuring the carrier concentration in a

专利名称：Optically measuring the carrier

concentration in a semiconductor

发明人：Hans P. Kleinknecht申请号：US05/938246申请日：19780830公开号：US04188123A公开日：19800212

摘要：A method of optically measuring the concentration of carriers in a doped regionof a semiconductor wafer includes the step of selectively introducing conductivitymodifiers into both the wafer and a test substrate simultaneously to form respectivelythe doped region in the wafer and a diffraction grating pattern in the substrate includingperiodically-spaced doped strips. The diffraction grating pattern is exposed to a beam ofmonochromatic light, and the intensity of one of the diffracted beams is measured,whereby the magnitude thereof is a measure of the carrier concentration in the dopedregion.

申请人：RCA CORP

代理人：H. Christoffersen,D. S. Cohen,T. H. Magee

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