Document Number: MMG3015N
Rev. 0, 8/2007
Heterojunction Bipolar TransistorTechnology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3015N is a General Purpose Amplifier that is internally Inputand output matched. It is designed for a broad range of Class A,small-signal, high linearity, general purpose applications. It is suitable forapplications with frequencies from 0 to 6000 MHz such as Cellular, PCS,BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.Features
•Frequency: 0-6000 MHz•P1dB: 20.5 dBm @ 900 MHz
•Small Signal Gain: 15.5 dB @ 900 MHz
•Third Order Output Intercept Point: 36 dBm @ 900 MHz•Single 5 Volt Supply•Active Bias
•Internally Matched to 50 Ohms
•Low Cost SOT-89 Surface Mount Package•RoHS Compliant
•In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
MMG3015NT10-6000 MHz, 15.5 dB20.5 dBmInGaP HBT123CASE 1514-02, STYLE 1SOT-89PLASTICTable 1. Typical Performance (1)
CharacteristicSmall-Signal Gain(S21)Input Return Loss(S11)Output Return Loss(S22)Power Output @1dBCompressionThird Order OutputIntercept Point
SymbolGpIRLORLP1dbIP3
900MHz15.5-15-1320.536
2140MHz14.5-19-920.533.5
3500MHz12.5-19-718.530.5
UnitdBdBdBdBmdBm
Table 2. Maximum Ratings
Rating
Supply Voltage (2)Supply Current (2)RF Input Power
Storage Temperature RangeJunction Temperature (3)
SymbolVCCICCPinTstgTJ
Value730012-65 to +150
150
UnitVmAdBm°C°C
2.Continuous voltage and current applied to device.
3.For reliable operation, the junction temperature should not exceed 150°C.
1.VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 95 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
SymbolRθJC
Value (4)41.5
Unit°C/W
4.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.MMG3015NT1 1RF Device DataFreescale Semiconductorhttp://oneic.com/Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small-Signal Gain (S21)Input Return Loss (S11)Output Return Loss (S22)
Power Output @ 1dB CompressionThird Order Output Intercept PointNoise FigureSupply Current (1)Supply Voltage (1)
SymbolGpIRLORLP1dBIP3NFICCVCC
Min14—————80—
Typ15.5-15-1320.5365.6955
Max——————120—
UnitdBdBdBdBmdBmdBmAV
1.For reliable operation, the junction temperature should not exceed 150°C.
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Table 5. Functional Pin Description
2PinNumber
123
123RFinGround
RFout/DC Supply
Pin Function
Figure 1. Functional DiagramTable 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22-A114)Machine Model (per EIA/JESD 22-A115)Charge Device Model (per JESD 22-C101)
Class1C (Minimum)A (Minimum)IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating1
Package Peak Temperature
260
Unit°C
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50 OHM TYPICAL CHARACTERISTICS
18Gp, SMALL−SIGNAL GAIN (dB)TC = 85°C161412
−40°C25°C0−5S22S11, S22 (dB)−10S11−1510
VCC = 5 Vdc80123456f, FREQUENCY (GHz)−20−2501234f, FREQUENCY (GHz)VCC = 5 VdcICC = 95 mA56Figure 2. Small-Signal Gain (S21) versusFrequency16
P1dB, 1 dB COMPRESSION POINT (dBm)900 MHzGp, SMALL−SIGNAL GAIN (dB)15
1960 MHz1413
3500 MHz12111010VCC = 5 VdcICC = 95 mA1214161820222600 MHz2140 MHz222120191817161514Figure 3. Input/Output Loss versus FrequencyVCC = 5 VdcICC = 95 mA0.511.522.533.5Pout, OUTPUT POWER (dBm)f, FREQUENCY (GHz)Figure 4. Small-Signal Gain versus OutputPowerIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)160ICC, COLLECTOR CURRENT (mA)1401201008060402000
1
2
3
4
5
6
VCC, COLLECTOR VOLTAGE (V)
383634323028260
Figure 5. P1dB versus FrequencyVCC = 5 VdcICC = 95 mA1 MHz Tone Spacing1
2
f, FREQUENCY (GHz)
3
4
Figure 6. Collector Current versus Collector
VoltageFigure 7. Third Order Output Intercept Point
versus Frequency
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50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)38
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)3837
3736
3635
VCC = 5 Vdcf = 900 MHz1 MHz Tone Spacing−20
0
20
40
60
80
100
35
34334.8
f = 900 MHz1 MHz Tone Spacing4.9
5
5.1
5.2
3433−40
VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
−20IMD, THIRD ORDERINTERMODULATION DISTORTION (dBc)−30−40
MTTF (YEARS)105
Figure 9. Third Order Output Intercept Point
versus Case Temperature
104
−50
VCC = 5 VdcICC = 95 mAf = 900 MHz1 MHz Tone Spacing−60
−70
5
10
15
20
Pout, OUTPUT POWER (dBm)
103
120
125
130
135
140
145
150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 95 mA
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dB)−20
VCC = 5 Vdc, ICC = 95 mA, f = 2140 MHzSingle−Carrier W−CDMA3.84 MHz Channel BandwidthPAR = 8.5 dB @ 0.01% Probability (CCDF)8
NF, NOISE FIGURE (dB)6
−30−40
4
−50−60−70
2
4
6
8
10
12
14
16
18
20
Pout, OUTPUT POWER (dBm)
2
VCC = 5 VdcICC = 95 mA00
1
2
f, FREQUENCY (GHz)
3
4
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA AdjacentChannel Power Ratio versus Output Power
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50 OHM APPLICATION CIRCUIT: 40-800 MHz
VSUPPLYR1C3L1RFINPUTDUTVCCZ4PCB
RFOUTPUTC4Z1C1Z2Z3Z4C2Z5Z1, Z5Z2Z30.347″ x 0.058″Microstrip0.575″ x 0.058″Microstrip0.172″ x 0.058″Microstrip
0.403″ x 0.058″Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
2010S21, S11, S22 (dB)0−10−20−30−40
0
200
400
f, FREQUENCY (MHz)
600
800
S11C1S22VCC = 5 VdcICC = 95 mAMMG30XXRev 2L1C2S21R1C4C3Figure 15. S21, S11 and S22 versus FrequencyFigure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
C1, C2C3C4L1R1
Description
0.01 μF Chip Capacitors0.1 μF Chip Capacitor1 μF Chip Capacitor470 nH Chip Inductor0 W, 1/10 W Chip Resistor
Part NumberC0603C103J5RACC0603C104J5RACC0603C105J5RACBK2125HM471-TCRCW06030000ZKEA
ManufacturerKemetKemetKemetTaiyo YudenVishay
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50 OHM APPLICATION CIRCUIT: 800-3600 MHz
VSUPPLYR1C3L1RFINPUTDUTVCCZ4PCB
RFOUTPUTC4Z1C1Z2Z3Z4C2Z5Z1, Z5Z2Z30.347″ x 0.058″Microstrip0.575″ x 0.058″Microstrip0.172″ x 0.058″Microstrip
0.403″ x 0.058″Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
3020S21, S11, S22 (dB)100−10−20−30800
S22S11VCC = 5 VdcICC = 95 mA1200
1600
2000
2400
2800
3200
3600
MMG30XXRev 2C1L1C2S21R1C4C3f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus FrequencyFigure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
C1, C2C3C4L1R1
Description
150 pF Chip Capacitors0.1 μF Chip Capacitor1 μF Chip Capacitor56 nH Chip Inductor0 W, 1/10 W Chip Resistor
Part NumberC0603C151J5RACC0603C104J5RACC0603C105J5RACHK160856NJ-TCRCW06030000ZKEA
ManufacturerKemetKemetKemetTaiyo YudenVishay
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50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (VCC = 5 Vdc, ICC = 95 mA, TC = 255C, 50 Ohm System)
fMHz200250300350400450500550600650700750800850900950100010501150120012501300135014001450150015501600165019002150240026502900295030003050310031503200325033003350
S11
|S11|0.280.280.270.270.270.260.260.260.260.260.250.250.250.250.250.240.240.240.240.240.240.240.240.240.240.230.230.230.230.230.240.250.260.280.280.280.280.290.290.290.290.290.29
∠φ174.23172.92171.92170.57169.49168.53167.16165.92164.77163.38162.57161.36160.35159.29158.03157.14156.02154.89153.09152.30151.41150.63150.09149.52149.15148.71147.76146.51145.11138.41132.77128.41124.16119.27118.39117.49116.75116.03115.21114.41113.69112.97112.24
|S21|6.176.166.156.146.126.116.106.086.066.056.036.015.995.975.955.935.915.885.835.805.775.755.725.695.675.655.625.605.575.415.235.054.874.694.654.624.594.554.524.484.444.414.37
S21
∠φ171.48169.36167.25165.15163.07160.97158.87156.78154.73152.65150.58148.53146.50144.45142.41140.38138.38136.37132.34130.37128.39126.41124.46122.50120.54118.61116.65114.72112.79103.2393.7784.4875.2166.0464.2462.4360.5958.7756.9755.1553.3651.5949.84
|S12|0.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.080.090.090.090.090.090.090.090.09
S12
∠φ-2.66-3.32-3.93-4.60-5.22-5.85-6.50-7.14-7.76-8.41-9.03-9.64-10.26-10.88-11.52-12.14-12.78-13.38-14.64-15.28-15.94-16.57-17.17-17.81-18.46-19.07-19.73-20.39-21.04-24.38-27.79-31.33-35.09-39.03-39.86-40.65-41.48-42.33-43.16-44.01-44.83-45.67-46.48
|S22|0.060.070.080.090.090.100.110.120.130.140.140.150.160.170.180.180.190.200.210.220.220.230.240.240.250.260.260.270.280.310.350.380.400.430.440.440.450.460.460.470.480.480.49
S22
∠φ-43.26-50.81-56.75-62.45-67.13-71.09-74.88-77.99-81.75-85.06-88.16-91.28-93.96-96.90-99.99-102.70-105.47-108.27-114.23-117.17-120.26-123.42-126.34-129.61-132.32-134.63-136.77-138.90-141.13-152.46-163.83-175.54172.45161.50159.35157.23154.83152.37150.02147.68145.58143.48141.43
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Table 10. Common Emitter S-Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 255C, 50 Ohm System) (continued)
fMHz34003450350035503600
S11
|S11|0.290.290.290.290.29
∠φ111.50110.37109.50108.57107.57
|S21|4.344.304.274.234.20
S21
∠φ48.0745.9644.5342.8341.14
|S12|0.090.090.090.090.09
S12
∠φ-47.31-48.32-49.01-49.82-50.64
|S22|0.490.500.500.510.52
S22
∠φ139.46137.08135.57133.81132.08
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1.77.620.305 diameter3.485.331.271.270.860.643.860.582.492.54Recommended Solder Stencil
NOTES:
1.THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BEUSED IN PCB LAYOUT DESIGN.
2.DEPENDING ON PCB DESIGN RULES, AS MANY VIAS ASPOSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.3.IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THENAS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TOTHE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMALAND RF PERFORMANCE.
4.RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MMPITCH.
Figure 20. Recommended Mounting Configuration
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