Method of forming a polysilicon layer

专利名称：Method of forming a polysilicon layer发明人：Mao-Yi Chang申请号：US10754406申请日：20040109公开号：US07303786B2公开日：20071204

摘要：In a method of forming a polysilicon layer on a substrate, a first embodimentcomprises: doping inert gas into the substrate to form a plurality of pores in thesubstrate; depositing a buffer later on the substrate; depositing an amorphous siliconlayer on the buffer layer; and heating the amorphous silicon layer to convert theamorphous silicon layer into a polysilicon layer. A second embodiment comprises:depositing a first buffer layer on a substrate; doping inert gas into the first buffer layerto form a plurality of pores in the first buffer layer; depositing a second buffer layer onthe first buffer layer; depositing an amorphous silicon layer on the second buffer layer;and heating the amorphous silicon layer to convert the amorphous silicon layer into apolysilicon layer.

申请人：Mao-Yi Chang

地址：Taipei TW

国籍：TW

代理机构：Thomas, Kayden, Horstemeyer & Risley

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