专利名称：Method of forming dual damascene
structure
发明人：Atsushi Shiota申请号：US10094647申请日：20020312
公开号：US20020142586A1公开日：20021003
专利附图：
摘要：A method of dual damascene structure formation suitable for wiring onsemiconductors. The method of forming a dual damascene structure includes the stepsof forming an organic dielectric film and a metal oxide film on an inorganic dielectric film,
forming a pattern on the resulting multilayer structure, and then etching the structure.
申请人：JSR CORPORATION
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