专利名称：MAGNETIC TUNNEL JUNCTIONS发明人：Manzar Siddik,Witold Kula,Gurtej S. Sandhu申请号：US14687280申请日：20150415
公开号：US20160308122A1公开日：20161020
专利附图：
摘要：A method of forming a magnetic electrode of a magnetic tunnel junctioncomprises forming non-magnetic MgO-comprising material over conductive material ofthe magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is
formed over the amorphous metal. The amorphous magnetic electrode material isdevoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directlyagainst the amorphous magnetic electrode material. The tunnel insulator material isdevoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about250° C. to form crystalline Co and Fe-comprising magnetic electrode material from anMgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-methodembodiments are disclosed.
申请人：Micron Technology, Inc.
地址：Boise ID US
国籍：US
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