SEMICONDUCTOR DEVICE HAVING A METAL VIA

专利名称：SEMICONDUCTOR DEVICE HAVING A METAL

VIA

发明人：SEUL KI HONG,Heon Jong SHIN,Hwi Chan

JUN,Min Chan GWAK

申请号：US16420825申请日：20190523

公开号：US20190279930A1公开日：20190912

专利附图：

摘要：A semiconductor device includes a substrate having a device isolation regiondefining an active region. An active fin is positioned in the active region. A gate structure

overlaps the active fin along a direction orthogonal to an upper surface of the substrateand extends in a second direction intersecting the first direction. A source/drain region isdisposed on the active fin. A contact plug is connected to the source/drain region andoverlaps the active fin. A metal via is positioned at a first level above the substrate higherthan an upper surface of the contact plug and spaced apart from the active fin. A metalline is positioned at a second level above the substrate, higher than the first level andconnected to the metal via. A via connection layer extends from an upper portion of thecontact plug and is connected to the metal via.

申请人：SAMSUNG ELECTRONICS CO., LTD.

地址：SUWON-SI KR

国籍：KR

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