Semiconductor device with multiple recombination c

专利名称：Semiconductor device with multiple

recombination center layers

发明人：Tomoyoshi Kushida,Hiroshi Tadano,Yoshio

Nakamura

申请号：US06/912578申请日：19860926公开号：US04752818A公开日：19880621

摘要：A semiconductor device comprises two main electrode regions, i. e., cathode andanode regions consisting of high impurity concentration regions of opposite conductivitytypes, a low impurity concentration region locally formed between the two mainelectrode regions, a gate region, formed near the cathode region, for controlling a maincurrent, a first local region which has a relatively low carrier lifetime and is formed in aregion of the low impurity concentration region near at least one of the gate andcathode regions, and a second local region which has a relatively low carrier lifetime andis formed in a region of the low impurity concentration region which is depleted at theend of the main current turn-off process or which is not depleted to the end, thussatisfying three conditions, i.e., high-speed switching, low forward voltage drop, and highblocking voltage between the main electrodes at the same time.

申请人：KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

更多信息请下载全文后查看