FORWARD BODY BIAS TRANSISTOR CIRCUITS

专利名称：FORWARD BODY BIAS TRANSISTOR

CIRCUITS

发明人：DE, Vivek, K.,KESHAVARZI, Ali,NARENDRA,

Siva, G.,BORKAR, Shekhar, Y.

申请号：EP98930284.9申请日：19980616公开号：EP1012971A1公开日：20000628

摘要： Under one aspect of the invention, a semi- conductor circuit (50) includes a firstgroup of field effect (FET) transistors (60 and 62) of a first type (p-type) each having abody and a gate. The circuit includes a second group of field effect (FET) transistors (54and 56) of a second type (n-type) each having a body and a gate, The cir- cuit includes afirst voltage source to selectively provide a forward bias to the bodies of the first groupof FET transistors (60 and 62) during a first mode and to provide a non-forward bias tothe bodies of the first group of FET transistors (60 and 62) during a second mode, andwhile in the first mode, the forward bias (68) is applied to the bodies of the first group ofFET transis- tors (60 and 62) independent of voltages (A and B) applied to the gates ofthe first group of FET transistors (60 and 62). Under another aspect of the invention, acircuit (310) includes p-channel field effect transistors (pFET transistors) having n-typebodies electrically coupled to the ground voltage node to forward body bias the pFETtran- sistors. A circuit includes N-channel field effect transistors (nFET transistors) havingp-type bod- ies electrically coupled to the supply voltage node to forward body bias thenFET transistors.

申请人：INTEL CORPORATION

地址：2200 Mission College Boulevard,P.O. Box 58119 Santa Clara, CA 95052-8119 US

国籍：US

代理机构：Molyneaux, Martyn William

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